HL6733FM visible high power laser diode ade-208-516b (z) 3rd edition may 1, 1998 description the HL6733FM is a 0.68 m m band algainp laser diode (ld) with a multi-quantum well (mqw) structure. it is suitable as a light source for large capacity optical disc memories and various other types of optical equipment. it does not have a photodiode, and the gnd pin is not connected with the ld chip. the outline is the same as mg-type (5.6 mm f ). application optical disc memories. optical equipment. features high output power : 35 mw (cw) visible light output : l p = 675 to 695 nm small package : f 5.6 mm low astigmatism : 6 m m typ (p o = 5 mw) internal circuit internal circuit package type HL6733FM: fm ld 1 3 2
HL6733FM 2 absolute maximum ratings (t c = 25 c) item symbol value unit optical output power p o 35 mw pulse optical output power p o (pulse) 50 * mw laser diode reverse voltage v r (ld) 2v operating temperature topr C10 to +70 c storage temperature tstg C40 to +85 c note: pulse condition : pulse width = 100 ns, duty = 50% optical and electrical characteristics (t c = 25 c) items symbols min typ max units test conditions optical output power p o 35 mw kink free * pulse optical output power p o(pulse) 50 mw kink free * threshold current ith 30 45 70 ma operating voltage v op 2.1 2.5 2.8 v p o = 30 mw slope efficiency h s 0.5 0.7 0.9 mw/ma 18 (mw) / (i (24mw) C i (6mw) ) lasing wavelength l p 675 690 695 nm p o = 30 mw beam divergence parallel to the junction q // 7 8.5 11 deg. p o = 30 mw beam divergence perpendicular to the junction q^ 17 19 23 deg. p o = 30 mw astigmatism a s 6 m mp o = 5 mw, na = 0.55 note: kink free is confirmed at the temperature of 25 c.
HL6733FM 3 curve characteristics 0 200 160 120 80 40 50 40 30 optical output power, p o (mw) 20 10 0 foward current i f (ma) optical output powervs.forward current slope efficiency, h s (mw/ma) case temperature t c ( c) slope efficiency vs. case temperature 60 1.0 0.8 0.6 0.4 0.2 0 010 50 40 30 20 t c = 60 c t c = 25 c t c = 0 c t c = 70 c threshold current, ith (ma) case temperature, t c ( c) threshold current vs. case temperature 60 010 50 40 30 20 100 0 70 80 80 70 intensity angle, q (deg) far feild pattern - 40 - 100 102030 - 20 - 30 40 1.0 0.8 0.6 0.4 0.2 0 p o = 30mw t c = 25 c perpendicular parallel
HL6733FM 4 lasing wavelength . l p (nm) case temperature, t c ( c) lasing wavelength vs. case temperature 685 695 690 relative intensity lasing wavelength, l p (nm) lasing spectrum 1000 800 600 polarization ratio 400 200 optical output power, p o (mw) polarization ratio vs. optical output power 050 40 30 20 10 0 t c = 25 c na = 0.55 t c = 25 c 060 10 50 40 30 20 705 700 695 690 685 680 p o = 30mw p o = 30mw p o = 20mw p o = 10mw p o = 5mw 80 70 astigmatism, a s ( m m) optical output power, p o (mw) astigmtism vs. optical output power 050 40 30 20 10 10 6 4 2 0 t c = 25 c na = 0.55 8
HL6733FM 5 01 2 100 80 60 40 20 0 applied voltage (kv) electrostatic destruction (mil standard) gain (db) frequency (hz) frequency response 1m 100m 3g 10m forward n = 10pcs d i o 10% judgment 4 3 p o = 3mw 3db/div 1g
HL6733FM 6 characteristics distribution n (pcs) operating voltage, v op (v) 23 2.8 2.6 2.4 2.2 1000 800 200 0 min max typ n p o = 30mw 18mw i(24mw) - i(6mw) : 2.36 : 2.74 : 2.50 : 1400pcs n (pcs) slope efficiency h s (mw/ma) 0.5 1.0 0.9 0.8 0.7 0.6 1000 600 400 200 0 min max typ n : 0.560 : 0.848 : 0.712 : 1400pcs n (pcs) threshold current, ith (ma) 30 80 70 60 50 40 1000 600 400 200 0 min max typ n : 40.2 : 57.9 : 45.8 : 1400pcs 800 n (pcs) operating current, i op (ma) 70 120 110 100 90 80 1000 600 400 200 0 min max typ n : 80.1 : 105.0 : 88.0 : 1400pcs 800 p o = 30mw 800 400 600
HL6733FM 7 n (pcs) perpendicular, q^ (deg) 16 26 24 22 20 18 1000 600 200 0 min max typ n p o = 30mw : 18.0 : 21.7 : 18.8 : 1400pcs n (pcs) parallel , q // (deg) 712 11 10 9 8 1000 400 200 0 min max typ n p o = 30mw p o = 30mw : 7.6 : 9.9 : 8.4 : 1400pcs n (pcs) lasing wavelength l p (nm) 680 700 690 1000 600 400 200 0 min max typ n : 684.8 : 694.0 : 691.5 : 1400pcs 800 600 800 400 800
HL6733FM 8 package dimensions hitachi code jedec eiaj weight (reference value) ld/fm ? ? ? unit: mm 1 2 3 5.6 +0 - 0.025 f 1.0 0.1 (0.4) (90 ) 1.6 0.2 f 0.4 +0.1 - 0 f f 4.1 0.3 3.55 0.1 0.25 glass 1.27 f 3 - 0.45 0.1 6.5 1.0 1.2 0.1 2.3 0.2 f 1 2 3 2.0 0.2 emitting point
HL6733FM 9 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi europe gmbh continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30-00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 01628-585000 fax: 01628-585160 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 hitachi semiconductor (america) inc. 2000 sierra point parkway brisbane, ca. 94005-1897 u s a tel: 800-285-1601 fax:303-297-0447 for further information write to: hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071
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